 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Smart Dual Lowside Power Switch HITFETa BTS3408G Data Sheet V1.0 Features * * * * * * * * * * * * * * Logic Level Input Compatible to 3V micro controllers ESD protection Thermal shutdown with auto restart Overload protection Short circuit protection Over voltage protection Open load detection (during Off) Current limitation Direct parallel control of the inputs FREEZE functionality for multiplexing General fault flag Very low standby quiescent current Switching frequencies up to 50kHz Application * * * * All kinds of resistive, inductive and capacitive loads in switching applications C compatible power switch for 12 V, 24 V and 42 V applications Replaces electromechanical relays and discrete circuits Line, stepper motor, lamp and relay driver General Description The BTS3408G is a dual channel Low-Side Switch with D-MOS output stages for driving resistive, capacitive and inductive loads. The design is based on Infineons Smart Power Technology (SPT) which allows bipolar, CMOS and power D-MOS devices on the same monolithic circuit. The BTS3408RS is protected by embedded protection functions and designed for automotive and industrial applications. It is especially suited for driving stepper motors and lines. Type HITFET BTS3408G a Ordering Code Q67006-A9570-A001 Package P-DSO-8-3 Data Sheet V1.0 1 2002-11-14 HITFETa BTS3408G Product Summary Parameter Supply voltage Continuous drain source voltage On-state resistance Current limitation Nominal output current (individual channel) Clamping energy VS BTS 3408 Logic FAULT Open Drain Status Feedback Protection and Diagnosis Control Protection Normal Function Over Temp Short Circuit Symbol Value 4.5 - 60 60 550 1 0.55 800 Unit V V m A A mJ VS VDS RDS(ON) ID(lim) ID(Nom) EAS Vbb IN1 Open Load @ OFF IN2 Freeze functionality OUT1 Output Control OUTPUT Stage OUT2 ENA GND Figure 1 Block Diagram 1 2 3 4 FAULT IN1 IN2 ENA VS OUT1 GND OUT2 8 7 6 5 Figure 2 Pin Configuration 2 2002-11-14 Data Sheet V1.0 LOAD HITFETa BTS3408G Pin Definitions and Functions Pin 1 2 3 4 Symbol FAULT IN1 IN2 ENA Function General Fault Flag; see Table 2 for operation mode. Input 1; input of channel 1; has an internal pull down; TTL/ CMOS compatible input. Input 2; input of channel 2; has an internal pull down; TTL/ CMOS compatible input. Enable/Freeze; has an internal pull down; device is enabled when voltage is higher then 1.2 Volts; if the voltage is below 1.7 Volts the output is freezed, input signals will be ignored; if the voltage is above 2 Volts input signals will be output ; see Table 1 for detailed information. Output 2; output of D-MOS stage 2. Ground. Output 1; output of D-MOS stage 1. Power supply. 5 6 7 8 OUT2 GND OUT1 VS Data Sheet V1.0 3 2002-11-14 HITFETa BTS3408G Circuit Description Logic Supply The logic is supplied with 4.5 up to 60 Volt by the VS pin. If VS falls below max. 4.5 Volts the logic is shut down and the output stages are switched off. Direct Inputs ENA The ENA/FREEZE input can be used to enable and/or to freeze the output control of the IC or to cut off the complete IC. By pulling the ENA input to low, i.e. applying a Voltage VENAL , the IC is in disable mode. The power stages are switched off and the current consumption is reduced to IS(stby). By applying a Voltage VENAFZ , the IC is in FREEZE mode. The output signals will remain in their former state. All input signals will be ignored. By pulling the input to high, the IC is in Enable mode. All input signals are output. The ENA - pin has an internal pull-down. IN1 / IN2 Each output is independently controlled via the respective input pin. The input pins are high active. If the common enable pin is high, the individual input signals are output. The input pins have an internal pull-down. Table 1 VENA Functional Table Mode IN1 IN2 IN1(-1) IN2(-1) OUT1 OUT2 Comment X 1) L H L H X 1) X 1) X 1) X 1) L L L H H L L H H L L H L H L H L H all outputs OFF former output state former output state former output state former output state input is output input is output input is output input is output 1) 0.8V Disable X 1) X 1) X 1) X 1) 1.2 .. 1.7V Freeze X L 1.2 .. 1.7V Freeze X 1) X 1) L 1.2 .. 1.7V Freeze X 1) X 1) H 1.2 .. 1.7V Freeze X 1) X 1) H 2.0V 2.0V 2.0V 2.0V 1) Enable L Enable L Enable H Enable H L H L H X 1) X 1) X 1) X 1) X = not relevant Data Sheet V1.0 4 2002-11-14 HITFETa BTS3408G Power stages Each output is protected by embedded protection functions. In the event of an overload or short to supply, the current is internally limited. The current limit is set to ID(lim). If this operation leads to an overtemperature condition, a second protection level (about 165 C) will turn the effected output into a PWM-mode (selective thermal shutdown with restart) to prevent critical chip temperatures. The temperature hysteresis is typically 10K. Zener clamping is implemented to limit voltages at the power transistors when inductive loads are switched off. Diagnostic The general FAULT pin is an open drain output. The FAULT pin is low active. It signals fault conditions of any of the two output stages. By doing so, single and/or dual fault conditions can be monitored. Single fault conditions can be assigned. Table 2 Standby Normal function Over temperature Open load / short to ground 1) 2) Diagnostic Table ENA L H H H INX X 1) H H L OUTX OFF ON OFF 2) OFF FAULT H H L L Operating Condition X = not relevant selective thermal shutdown for each channel at overtemperature Fault Distinction Open load / short to ground is recognized during OFF-state. Overtemperature as a result of an overload or short to battery can only arise during ON-state. If there is only one fault at a time, it is possible to distinguish which channel is affected with which fault. . Data Sheet V1.0 5 2002-11-14 HITFETa BTS3408G Absolute Maximum Ratings 1) Tj = -40C to 150C , unless otherwise specified Parameter Supply Voltage Drain source voltage (OUT1, OUT2) Input voltage (IN1, IN2, ENA) Continuous input current VIN>7V FAULT output voltage Operating temperature range Storage temperature range Power dissipation (DC) 2) Nominal load current 2) one channel active both channel active Symbol Values +4.5 .. +60 -0.3 .. +60 -0.3 ... +7 1 -0.3 ... +7 Unit Remarks V V V V - - - - - - VDS0.5V, Tj150C, TA=85C, VIN=5V VS VDS VIN IIN VFault Tj Tstg Ptot ID(Nom) mA - -40 ... +150 C -55 ... +150 C 0.88 0.55 0.45 800 2000 mJ V W A Unclamped single pulse inductive energy EAS one channel active Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Junction soldering point Junction - ambient @ min. footprint Junction - ambient @ 6cm cooling area 2) 1) ID=0.7A, Tj(start)=25C - VESD - - E 40/150/56 - - - - RthJS RthJA 10 185 142 K/W - K/W - Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Device on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for pin 4 connection. 2) Data Sheet V1.0 6 2002-11-14 HITFETa BTS3408G Electrical Characteristics VS = 4.5 to 18V; Tj = -40 to 150C; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Conditions Power supply Supply voltage Supply current in enable mode VS IS(ON) 4.5 - - 1.5 - 60 4 16 V - mA ENA=High, OUT1=OUT2=On Supply current in standby mode 1) IS(stby) - Power outputs Drain source clamp voltage Output leakage current 2) A ENA=Low VDS(AZ) 60 IDSS - - 1 75 5 V ID = 1 mA ENA=Low, IN=Low, VDS = 60 V ENA=High, IN=Low, VDS = 42 V A Output pull down current IPD(OL) 50 100 200 A On-state resistance Tj = 25 C Tj = 150 C Current limit RDS(on) - - 1 - - 480 800 1.5 2 2 550 1000 2 8 8 m ID = 0.2 A, VS = 5 V A - ID(lim) Turn-on time IN=High to 90% ID: ton Turn-off time IN=Low to 10% ID: ton s s RL=2k, VBB=12V,VS=5V RL=2k, VBB=12V,VS=5V Digital inputs (IN1, IN2, ENA) Input 'Low' voltage IN1, IN2: ENA: ENA voltage for 'FREEZE' functionality V -0.3 - VINL VENAL -0.3 - VENAFZ 1.2 - 0.8 0.8 1.7 V - - Data Sheet V1.0 7 2002-11-14 HITFETa BTS3408G Electrical Characteristics (cont'd) VS = 4.5 to 18V; Tj = -40 to 150C; unless otherwise specified Parameter Input 'High' voltage IN1, IN2: ENA: Input voltage hysteresis Input pull down current IN1, IN2: ENA: Digital Output (FAULT) Output 'Low' voltage Diagnostic Functions Open load / short to ground detection voltage Fault filter time for open load Protection Functions 3) Thermal overload trip temperature Thermal hysteresis Tjt 150 - 165 10 180 - Symbol Limit Values min. typ. - - 300 50 50 max. V - - - - 100 100 mV - Unit Test Conditions VINH 2.0 VENAH 2.0 VINhys - IINPD 20 IENAPD 20 A - VFLTL - - 0.4 V IFLTL=1.6mA, VDS(OL) 0.5*VS 0.7*VS 0.9*VS V tfilter(OL) 30 100 200 - s VS=5V C mJ - - Tjt Unclamped single pulse inductive EAS energy one channel active,Tj(start)=25C both channel active,Tj(start)=25C one channel active,Tj(start)=150C both channel active,Tj(start)=150C 1) 2) 3) ID=0.7 A 800 550 240 240 See also diagram 4 on page 14. See also diagram 5 on page 14. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Data Sheet V1.0 8 2002-11-14 HITFETa BTS3408G EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 3 Parameter Temperature Supply Voltage Input Voltage (ENA, IN1, IN2) Load Operation mode DUT specific Fast electrical transients acc. to ISO 7637 Test Result Test1) Pulse 1 2 3a 3b 4 5 1) Test Conditions Symbol TA VBB VINx RL1 , RL2 PWM DC Value 23 5 13.5 5 27 - - Unit C V V Remark - - - ohmic fINx=100Hz, D=0.5 ON / OFF - - all tests with ENA=HIGH Max. Test Level -200V +200V -200V +200V -7V 175V VS and OUTx stressed ON OFF E(-120V) E(-120V) E(+120V E(+120V C C C E(50V) C C C E(65V) OUTx stressed ON C C C C C E(70V) OFF C C C C C E(75V) Pulse Cycle Time and Generator Impedance 500ms ; 10 500ms ; 10 100ms ; 10 100ms ; 10 0.01 400ms ; 2 The test pulses are applied at VBB Definition of functional status Class C E Content All functions of the device are performed as designed after exposure to disturbance. One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit. Data Sheet V1.0 9 2002-11-14 HITFETa BTS3408G Figure 3 VBB Test circuit for ISO pulse PULSE stress also for VS 13.5V 3408 VS FAULT OUT1 IN1 IN2 OUT2 ENA GND RL1 RL2 Data Sheet V1.0 10 2002-11-14 HITFETa BTS3408G Conducted Emissions Acc. IEC 61967-4 (1/150 method) Typ. OUTx Emissions at PWM-mode with 150-matching network 100 90 80 70 60 50 Noise OUT1 OUT2 150ohm Class1 150ohm Class6 Conducted Susceptibility Acc. I47A/658/CD IEC 62132-4 (Direct Power Injection) Direct Power Injection: Forward Power CW Failure Criteria: Amplitude or frequency variation max. 10% at OUT Typ. OUTx Susceptibility at DC-ON/OFF and at PWM 40 35 30 dBV 150 / 8-H 40 30 20 10 0 -10 -20 0,1 1 10 100 1000 150 / 13-N 25 20 15 10 5 0 1 10 100 1000 Limit OUT2, ON OUT2, OFF OUT2, PWM Figure 4 VBB Test circuit for conducted emission 1) dBm f / MHz f / MHz Figure 5 5V 3408 VS FAULT OUT1 IN1 IN2 OUT2 ENA GND RL1 RL2 5V 150-Network 150-Network VBB Test circuit for conducted susceptibility 2) B A N B A N 3408 VS FAULT OUT1 IN1 IN2 OUT2 ENA GND RL1 RL2 HF HF 2) 1) For defined decoupling and high reproducibility a defined choke (5H at 1 MHz) is inserted between Vbb and Out-Pin. Broadband Artificial Network (short BAN) consists of the same choke (5H at 1 MHz) and the same 150ohm-matching network as for emission measurement for defined decoupling and high reproducibility. Data Sheet V1.0 11 2002-11-14 HITFETa BTS3408G Terms VS IFLT VFLT VIN1 IIN1 IN1 IIN2 IN2 VIN2 IENA VENA ENA IS VS FAULT ID1 OUT1 VDS1 ID2 OUT2 GND VDS2 VBB Figure 6 Input circuit (ESD protection) Figure 8 Application Circuit VBB ESD zener diodes are not designed for DC current. Figure 7 Inductive and over voltage output clamp LOAD uC Vcc INT Px.1 Px.2 Py.1 GND 3408 VS FAULT IN1 OUT1 IN2 OUT2 ENA GND line VAZ Drain VDS Power DMOS Source ID Data Sheet V1.0 12 2002-11-14 HITFETa BTS3408G Timing diagrams Figure 9 ENA INx VDSx t IDx 0.9*ID 0.1*ID ton toff t Characteristics 1. Max. allowable Power Dissipation Ptot = f(Tamb) 1 Switching a resistive load P to t 6cm 0 ,8 W m in . fo o tp rin t 0 ,6 0 ,4 Figure 10 Switching an inductive load 0 ,2 ENA INx VDS(AZ) VDSx VBB t IDx t 0 -5 0 -2 5 0 25 50 75 C 100 125 150 T am b 2. On-state Resistance RON = f(Tj); ID = 0.2 A; VS = 5 V 1000 R ON 9 m0 0 800 Figure 11 ENA INx IDx Short circuit 700 600 500 400 300 m a x. typ . t jx FAULT thermal hysteresis 200 100 0 -5 0 -2 5 0 25 50 75 t C 100 125 150 T j Data Sheet V1.0 13 2002-11-14 HITFETa BTS3408G 3. Typ. Short Circuit Current 5. Typ. Output leakage current ID(lim) = f(Tj) 2 IDSS = f(Tj);VS = 18 V; VDS = 60 V 2 I D (lim ) typ . A 1 ,5 I DSS 1 ,6 A ty p . 1 ,2 1 0 ,8 0 ,5 0 ,4 0 -5 0 -2 5 0 25 50 75 0 C 100 125 150 T j -5 0 -2 5 0 25 50 75 C 100 125 150 T j 4. Typ. Supply current in Standby mode IS(stby) = f(Tj);VS = 5 V 10 I S (s tb y) 8 A typ . 6 4 2 0 -5 0 -2 5 0 25 50 75 C 100 125 150 T j Data Sheet V1.0 14 2002-11-14 HITFETa BTS3408G Package Outlines P-DSO-8-3 (Small Outline Transistor) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information" SMD = Surface Mounted Device Data Sheet V1.0 15 Dimensions in mm 2002-11-14 GPS05560 HITFETa BTS3408G Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 76, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Tech-nologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are in-tended to be implanted in the human body, or to support and/ or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet V1.0 16 2002-11-14 |
Price & Availability of BTS3408G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |